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  unisonic technologies co., ltd mmbt9018 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r206-032.c am/fm amplifier, local oscillator of fm/vhf tuner ? features * high current gain bandwidth product f t =1.1ghz (typ) sot-23 1 2 3 1 2 3 sot-523 ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing mmbt9018-x-ae3-r mmbt9018l-x-ae3-r MMBT9018G-X-AE3-R sot-23 e b c tape reel mmbt9018-x-an3-r mmbt9018l-x-an3-r mmbt 9018g-x-an3-r sot-523 e b c tape reel ? marking
mmbt9018 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-032.c ? absolute maximum ratings (ta=25 c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 5 v collector current i c 50 ma sot-23 225 mw collector power dissipation sot-523 pc 150 mw junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 c) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100ua, i e =0 30 v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 15 v emitter-base breakdown voltage bv ebo i e =100ua, ic=0 5 v collector cut-off current i cbo v cb =12v, i e =0 50 na collector-emitter satu ration voltage v ce(sat) i c =10ma, i b =1ma 0.5 v dc current gain h fe v ce =5v, i c =1ma 28 100 198 current gain bandwidth product f t v ce =5v, i c =5ma 700 1100 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 1.3 1.7 pf ? classification of h fe rank d e f g h i j range 28-45 39-60 54-80 72-108 97-146 132-198 180-265
mmbt9018 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-032.c ? typical characteristics static characteristics collector-emitter voltage, v ce ( v) collector current, i c (ma) 0246810 10 9 8 7 6 5 4 3 2 1 0 135 79 i b =90a i b =80a i b =70a i b =50a i b =60a i b =40a i b =30a i b =20a i b =10a dc current gain collector current, i c (ma) dc current gain, h fe 110 10 1000 v ce =5v 100 saturation voltage, v be(sat) , v ce(sat) (v) capacitance, c ob (pf) 110 current gain bandwidth product 0.1 100 1000 collector current, i c (ma) v ce =5v
mmbt9018 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-032.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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